Title :
A method for reducing MOSFET high side power switch turn-on time
Author :
Puscasu, Razvan ; Creosteanu, Laurentiu ; Brezeanu, G.
Author_Institution :
ON Semicond. Bucharest, Bucharest, Romania
Abstract :
A novel method for reducing the turn-on time of a high side MOSFET power switch is presented. By discharging a loaded capacitor into the gate of the power switch, an important reduction of the turn-on time has been obtained. This driving method is compared with the classical case in which the gate is charged only by the charge pump block.
Keywords :
capacitors; charge pump circuits; field effect transistor switches; power MOSFET; MOSFET high-side power switch turn-on time reduction; charge pump block; driving method; loaded capacitor discharging; Capacitors; Charge pumps; Logic gates; MOSFET; Switches; Switching circuits;
Conference_Titel :
Semiconductor Conference (CAS), 2013 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-5670-1
Electronic_ISBN :
1545-827X
DOI :
10.1109/SMICND.2013.6688684
