Investigation of the base resistance contributions in SiGe HBT devices

Author

Stein, Fridtjof ; Celi, D. ; Maneux, Cristell ; Derrier, N. ; Chevalier, P.

Author_Institution

STMicroelectron., Crolles, France

Volume

2

fYear

2013

fDate

14-16 Oct. 2013

Firstpage

311

Lastpage

314

Abstract

The internal base resistance, that presents a crucial figure of merit and parameter for accurate RF device modelling is investigated. The reliability of a widely used approach for geometry scalable parameter extraction is analysed using measurement data of a state-of-the-art SiGeC HBT technology. The obtained results are used for numerical device simulations of the inner base as well as the base link region to verify the resistance values. Furthermore results from an alternative approach using measured S-parameter data from standard RF structures are compared by means of the semi-circle method.

Keywords

Ge-Si alloys; S-parameters; heterojunction bipolar transistors; RF device modelling; SiGeC; base link region; base resistance contribution; figure-of-merit; geometry scalable parameter extraction; internal base resistance; measured S-parameter data; numerical device simulations; resistance values; silicon germanium carbon HBT devices; standard RF structures; Current measurement; Electrical resistance measurement; Geometry; Heterojunction bipolar transistors; Radio frequency; Resistance; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2013 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4673-5670-1

Electronic_ISBN

1545-827X

Type

conf

DOI

10.1109/SMICND.2013.6688685

Filename

6688685