Broadband two stages low noise amplifier for milimeter wave

Author

Giangu, I. ; Buiculescu, V.

Author_Institution

Nat. Inst. for R&D in Microtehnol. (IMT Bucharest), Bucharest, Romania

Volume

2

fYear

2013

fDate

14-16 Oct. 2013

Firstpage

323

Lastpage

326

Abstract

The paper presents a two stage low noise amplifier (LNA) design in GaAs monolithic microwave integrated circuit (MMIC) technology working in the millimeter wave domain. The aim of this paper was to design a LNA with gain of 20 dB and a noise figure of maximum 3 dB. The use of the S parameter that characterizes the FET offers us the needed information for LNA design. Microstrip lines and some lumped elements are used as elements of all input and output matching networks. In the end the LNA was simulated and the results have demonstrated that the LNA has a gain over 20 dB and a noise figure around 3 dB over the 20-40 GHz band.

Keywords

MMIC amplifiers; S-parameters; field effect MMIC; gallium arsenide; integrated circuit design; low noise amplifiers; microstrip lines; microwave field effect transistors; millimetre wave field effect transistors; FET; GaAs; LNA design; MMIC technology; S parameter; broadband two stages low noise amplifier; gain 20 dB; input matching networks; lumped elements; microstrip lines; millimeter wave domain; monolithic microwave integrated circuit technology; output matching networks; Field effect transistors; Gain; Impedance; Low-noise amplifiers; Microwave amplifiers; Noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2013 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4673-5670-1

Electronic_ISBN

1545-827X

Type

conf

DOI

10.1109/SMICND.2013.6688688

Filename

6688688