Title :
Broadband two stages low noise amplifier for milimeter wave
Author :
Giangu, I. ; Buiculescu, V.
Author_Institution :
Nat. Inst. for R&D in Microtehnol. (IMT Bucharest), Bucharest, Romania
Abstract :
The paper presents a two stage low noise amplifier (LNA) design in GaAs monolithic microwave integrated circuit (MMIC) technology working in the millimeter wave domain. The aim of this paper was to design a LNA with gain of 20 dB and a noise figure of maximum 3 dB. The use of the S parameter that characterizes the FET offers us the needed information for LNA design. Microstrip lines and some lumped elements are used as elements of all input and output matching networks. In the end the LNA was simulated and the results have demonstrated that the LNA has a gain over 20 dB and a noise figure around 3 dB over the 20-40 GHz band.
Keywords :
MMIC amplifiers; S-parameters; field effect MMIC; gallium arsenide; integrated circuit design; low noise amplifiers; microstrip lines; microwave field effect transistors; millimetre wave field effect transistors; FET; GaAs; LNA design; MMIC technology; S parameter; broadband two stages low noise amplifier; gain 20 dB; input matching networks; lumped elements; microstrip lines; millimeter wave domain; monolithic microwave integrated circuit technology; output matching networks; Field effect transistors; Gain; Impedance; Low-noise amplifiers; Microwave amplifiers; Noise;
Conference_Titel :
Semiconductor Conference (CAS), 2013 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-5670-1
Electronic_ISBN :
1545-827X
DOI :
10.1109/SMICND.2013.6688688
