Effect of a discrete PIN diode on Defected Ground Structure

Author

Hadi, M. H. Abdul ; Ahmad, B.H. ; Shairi, N.A. ; Peng Wen Wong

Author_Institution

Centre for Telecommun. Res. &Innovation, Univ. Teknikal Malaysia Melaka (UTeM), Durian Tunggal, Malaysia

fYear

2013

fDate

22-25 Sept. 2013

Firstpage

333

Lastpage

337

Abstract

This paper investigates the effect of a discrete PIN diode on Defected Ground Structure (DGS) where the different resonant frequency between ON and OFF state of the PIN diode is observed. Analytical modeling is determined and analyzed based on equivalent circuit of PIN diode and DGS. Then, a circuit simulation is performed using simulation software with different value of inductance and capacitance of DGS during ON and OFF state of the PIN diode. As a result, the resonant frequency of the PIN diode on the DGS shifted to higher frequency during ON state and shifted to lower frequency during OFF state. Besides, a larger value of inductance with a smaller value of capacitance of DGS will produce a larger range of resonant frequency between ON and OFF state and vice versa.

Keywords

circuit simulation; defected ground structures; p-i-n diodes; analytical modeling; circuit simulation; defected ground structure; discrete PIN diode; equivalent circuit; resonant frequency; simulation software; Capacitance; Inductance; Microwave circuits; Microwave communication; PIN photodiodes; Resonant frequency; Switches; DGS; PIN diode; RF switch; defected ground structure; resonant frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Technology and Applications (ISWTA), 2013 IEEE Symposium on

Conference_Location

Kuching

ISSN

2324-7843

Print_ISBN

978-1-4799-0155-5

Type

conf

DOI

10.1109/ISWTA.2013.6688798

Filename

6688798