Nanoimprint Lithography-Structured Organic Electrochemical Transistors and Logic Circuits

We report on the fabrication of organic electrochemical transistors structured by nanoimprint lithography. The devices were scaled down as a result of our previous findings for inkjet printed transistors, where a reduced source-drain width and a shorter distance to the gate resulted in higher ON-to-OFF current ratios. We could show that these findings also prove true for transistors with feature sizes below 10 μm. Furthermore, we fabricated inverters and NAND gates with switching times below 1 s. These logic gates mark an important step for organic electrochemical transistors toward their usability in more complex logic circuits.