DocumentCode
658524
Title
Exploration Methodology for 3D Memory Redundancy Architectures under Redundancy Constraints
Author
Bing-Yang Lin ; Mincent Lee ; Cheng-Wen Wu
Author_Institution
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear
2013
fDate
18-21 Nov. 2013
Firstpage
1
Lastpage
6
Abstract
Redundancy repair is a commonly-used technique for memory yield improvement. In order to ensure high repair efficiency and final product yield, it is necessary to explore and develop the memory redundancy architecture carefully. However, due to the different failure distributions of memory arrays and various design constraints of memory architectures, it is difficult to explore the efficiency of the memory architecture thoroughly. In this paper, we propose a redundancy architecture exploration methodology to find the redundancy architecture with highest repair rate under redundancy constraints. Given a set of design constraints, failure distributions, and memory architectures, our methodology can explore at least 3(log2M* log2N* log2S) redundancy architectures systematically, where M, N, and S are the address sizes of memory row and column in a die, and the number of slices in the memory cube, respectively. In our experiments, the repair rates of 10 different 3D redundancy architectures with 3 different redundancy analysis algorithms in a given failure pattern distribution are simulated. The experimental result shows that the difference of the repair rates between the most efficient and least efficient memory redundancy architectures is up to 49.42%.
Keywords
failure analysis; memory architecture; 3D memory redundancy architectures; design constraints; failure pattern distribution; memory arrays; memory cube slices; memory yield improvement; product yield; redundancy analysis algorithms; redundancy architecture exploration methodology; redundancy constraints; redundancy repair; repair efficiency; repair rate; Algorithm design and analysis; Maintenance engineering; Memory architecture; Memory management; Random access memory; Redundancy; Three-dimensional displays; 3D RAM; memory built-in self-repair (BISR); memory testing; redundancy analysis (RA); redundancy repair; yield improvement;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Symposium (ATS), 2013 22nd Asian
Conference_Location
Jiaosi Township
ISSN
1081-7735
Type
conf
DOI
10.1109/ATS.2013.11
Filename
6690605
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