DocumentCode
658861
Title
Collaborative innovation for future mobile applications
Author
Nair, R.
Author_Institution
GLOBALFOUNDRIES Singapore, Singapore, Singapore
fYear
2013
fDate
11-13 Nov. 2013
Firstpage
13
Lastpage
16
Abstract
Advanced mobile applications are the predominant driver for semiconductor technology innovations both at the leading edge and at the mature nodes. The short life-cycles of mobile products and the need for SoC level differentiation imposes significant challenges on technology architecture and time-to-volume. We foresee a move towards much closer collaboration, in fact a virtual IDM-like model, on both technical and business levels. With daunting technical challenges like 3D stacking, 450mm fabs, new transistor architectures, multi-patterning, extreme ultraviolet (EUV) lithography, collaboration - early, often and deep - is really the only practical approach given the cost and complexities involved. Early eco-system enablement with accurate models and silicon proven IP ensures first pass design success, which is an important step for faster Time-to-volume (TTV). We refer to this close collaborative model as Foundry 2.0.
Keywords
design for manufacture; foundries; innovation management; silicon; system-on-chip; ultraviolet lithography; 3D stacking; Foundry 2.0; SoC level differentiation; collaborative innovation; extreme ultraviolet lithography; future mobile applications; semiconductor technology innovations; size 450 nm; system-on-chip; technology architecture; time-to-volume; virtual IDM-like model; Collaboration; Foundries; Manufacturing; Micromechanical devices; Mobile communication; Semiconductor device modeling; System-on-chip; CMOS; MEMS; TSV; collaboration; design for manufacturing; foundry; platform;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference (A-SSCC), 2013 IEEE Asian
Conference_Location
Singapore
Print_ISBN
978-1-4799-0277-4
Type
conf
DOI
10.1109/ASSCC.2013.6690970
Filename
6690970
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