Title :
Deep trench capacitor based step-up and step-down DC/DC converters in 32nm SOI with opportunistic current borrowing and fast DVFS capabilities
Author :
Paul, A. ; Dong Jiao ; Sapatnekar, Sachin ; Kim, Chul Han
Author_Institution :
Univ. of Minnesota, Minneapolis, MN, USA
Abstract :
A switched capacitor step-down converter fabricated in 32nm CMOS achieves a 5X improvement in response time for fast dynamic voltage and frequency scaling (DVFS). We also present a step-up converter based on a bi-directional voltage doubler, which is capable of reducing supply noise up to 45% by opportunistically borrowing current from adjacent idle power domains. Using ultra-high density deep trench capacitors, we are able to achieve an output power density of 2.78W/mm2 at a peak efficiency of 85% from the step-down converter and 0.9W/mm2 at a peak efficiency of 82% from the voltage doubler.
Keywords :
CMOS digital integrated circuits; DC-DC power convertors; capacitors; integrated circuit noise; power aware computing; switched capacitor networks; CMOS; DVFS capabilities; SOI; bidirectional voltage doubler; dynamic voltage and frequency scaling; efficiency 82 percent; efficiency 85 percent; idle power domains; opportunistic current borrowing; output power density; size 32 nm; step-down DC/DC converters; step-up DC/DC converters; supply noise reduction; switched capacitor step-down converter; ultra-high density deep trench capacitors; Arrays; Capacitors; Density measurement; Noise; Power system measurements; Switches; Voltage-controlled oscillators; DVFS; deep trench capacitor; efficiency; power density; switched capacitor converter;
Conference_Titel :
Solid-State Circuits Conference (A-SSCC), 2013 IEEE Asian
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-0277-4
DOI :
10.1109/ASSCC.2013.6690979
