Title :
A 40nm-CMOS, 18 μW, temperature and supply voltage independent sensor interface for RFID tags
Author :
De Smedt, Valentijn ; Gielen, G. ; Dehaene, Wim
Author_Institution :
Dept. Elektrotech., Katholieke Univ. Leuven, Heverlee, Belgium
Abstract :
A fully-integrated, oscillator-based sensor interface for RFIDs and low-power applications is presented in this article. The circuit is processed and tested in a 40 nm CMOS technology. The interface translates the analog sensor signal, coming from a differential sensor, into a Pulse width Modulated (PWM) signal of which the duty cycle is proportional to the sensor value. Due to the high control linearity of the used oscillator, the interface has a low nonlinearity and can be made highly temperature and supply voltage independent. The total power consumption is 18 μW at 1.0 V and the interface works over a 0.8 to 1.5 V supply voltage range and a -20 to 100°C temperature range. The voltage dependency is below 1.42 %/V and the maximum temperature dependency is 79 ppm/°C. The oscillator frequency is slightly above 2 MHz in all circumstances. The measured SNDR of 47.4 dB results in a FOM of 66 fJ/b-conv.
Keywords :
CMOS integrated circuits; integrated circuit testing; low-power electronics; oscillators; pulse width modulation; radiofrequency identification; CMOS technology; PWM signal; RFID tags; SNDR; analog sensor signal; circuit testing; control linearity; differential sensor; duty cycle; fully-integrated oscillator-based sensor interface; low-power applications; oscillator frequency; power 18 muW; pulse width modulated signal; sensor value; size 40 nm; temperature -20 C to 100 C; voltage 1 V; voltage dependency; Delays; Linearity; Oscillators; Pulse width modulation; Switches; Temperature measurement; Temperature sensors;
Conference_Titel :
Solid-State Circuits Conference (A-SSCC), 2013 IEEE Asian
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-0277-4
DOI :
10.1109/ASSCC.2013.6690995