Title :
A 40nm, high bandwidth, VCO-based burst-mode receiver backend for EHF multi-carrier wireless
Author :
Redant, Tom ; Dehaene, Wim
Author_Institution :
ESAT-MICAS, K.U. Leuven, Leuven, Belgium
Abstract :
A receiver back-end in 40 nm CMOS for an EHF wireless multi-carrier applications is presented. The system is designed to reduce the bandwidth of a multi-tone I/Q decomposed wideband signal after which it is digitized and stored. The bandwidth reduction is applied by means of a reconfigurable sub-sampling operation. The integrated ADCs, performing the digitization, are a time-based dual 128-phase VCO topology implementation. On-chip data buffering of 96 kB is foreseen, capable of storing burst signals of a duration up to 8 μs. The IC is capable to process discrete spectra up to an RF bandwidth of 6 GHz originating from a downconverted 60 GHz signal. A measured effective resolution of 6 bits is realized thanks to the inherent first order noise shaping of the built-in ADC. The SFDR is measured at 40 dB. Power consumption for the complete I/Q core, sampling at 3 GHz, is measured to be 106 mW. The area of the 40 nm core is 0.162 mm2.
Keywords :
CMOS integrated circuits; MMIC oscillators; analogue-digital conversion; field effect MIMIC; field effect MMIC; millimetre wave oscillators; millimetre wave receivers; voltage-controlled oscillators; EHF multicarrier wireless multicarrier applications; SFDR; VCO-based burst-mode receiver backend; bandwidth reduction; discrete spectra process; first order noise shaping; frequency 3 GHz; frequency 60 GHz; integrated ADCs; multitone I/Q decomposed wideband signal; on-chip data buffering; power 106 mW; power consumption; reconfigurable subsampling operation; size 40 nm; time-based dual 128-phase VCO topology; word length 6 bit; Bandwidth; Integrated circuits; Noise; Random access memory; Receivers; Topology; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference (A-SSCC), 2013 IEEE Asian
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-0277-4
DOI :
10.1109/ASSCC.2013.6691004