DocumentCode :
658914
Title :
A 20-Gb/s optical receiver with integrated photo detector in 40-nm CMOS
Author :
Shih-Hao Huang ; Wei-Zen Chen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear :
2013
fDate :
11-13 Nov. 2013
Firstpage :
225
Lastpage :
228
Abstract :
This paper presents a 20-Gb/s monolithically integrated CMOS optical receiver, integrating a photo detector, a transimpedance amplifier, and a post limiting amplifier on a single chip. Incorporating a 2-D meshed spatially-modulated light detector, the optical receiver achieves a record-high speed and is capable of delivering 80-dBΩ conversion gain when driving 50-Ω output loads. Nested-feedback topologies are adopted for transimpedance and post limiting amplifier design to achieve broad-band and high-gain operations without shunt-peaking inductors. Implemented in a generic 40-nm CMOS technology, the chip size is 0.6 × 0.54 mm. This receiver core drains 30 mW from 1-V supply.
Keywords :
CMOS analogue integrated circuits; feedback amplifiers; integrated circuit design; operational amplifiers; optical limiters; optical receivers; optical sensors; photodetectors; spatial light modulators; wideband amplifiers; 2D meshed spatially-modulated light detector; bit rate 20 Gbit/s; broadband amplifier; generic CMOS technology; integrated photodetector; monolithically integrated CMOS optical receiver; nested-feedback topology; post limiting amplifier; power 30 mW; resistance 50 ohm; shunt-peaking inductor; size 40 nm; transimpedance amplifier; voltage 1 V; Bandwidth; CMOS integrated circuits; CMOS technology; Detectors; Gain; Optical fiber amplifiers; Optical receivers; OEIC; Optical Receiver; Photo Detector (PD); Transimpedance Amplifier (TIA);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference (A-SSCC), 2013 IEEE Asian
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-0277-4
Type :
conf
DOI :
10.1109/ASSCC.2013.6691023
Filename :
6691023
Link To Document :
بازگشت