A low voltage 8-T SRAM with PVT-tracking bitline sensing margin enhancement for high operating temperature (up to 300°C)

An 8-Kbit low power 8-T SRAM for high temperature (up to 300°C) applications is presented. Near-threshold operation is selected for minimum performance variations over a wide temperate range. We proposed a PVT-tracking bitline sensing margin enhancement technique to improve the bitline swing and the sensing window. Test chips fabricated in a commercial 1.0-μm SOI technology with high temperature interconnection option demonstrates successful SRAM operation at 2 V, 300°C. The power consumption and access time of 0.94 mW and 256ns was achieved at 2 V and 300°C.