DocumentCode :
658930
Title :
A 10-bit 50-MS/s SAR ADC with techniques for relaxing the requirement on driving capability of reference voltage buffers
Author :
Shao-Hua Wan ; Che-Hsun Kuo ; Soon-Jyh Chang ; Guan-Ying Huang ; Chun-Po Huang ; Goh Jih Ren ; Kai-Tzeng Chiou ; Cheng-Hsun Ho
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear :
2013
fDate :
11-13 Nov. 2013
Firstpage :
293
Lastpage :
296
Abstract :
A high speed successive approximation (SAR) ADC requires reference voltage buffers with high driving capability. Moreover, the power consumption of the reference buffers is usually several times larger than that of the SAR ADC itself. Three techniques are adopted to mitigate the requirement on driving capability of reference voltage buffers for SAR ADCs. A 10b 50MS/s ADC based on the proposed techniques is presented. The prototype ADC was fabricated in 40nm LP 1P7M CMOS technology. It consumes 0.47 mW at 50 MS/s from 1.1V supply voltage and achieves ENOB of 9.18-bit and figure of merit (FoM) of 16 fJ/conversion-step. The active area is 0.0114 mm2.
Keywords :
CMOS integrated circuits; analogue-digital conversion; buffer circuits; driver circuits; logic design; reference circuits; CMOS technology; SAR ADC; driving capability; high speed successive approximation; power 0.47 mW; power consumption; reference voltage buffers; size 40 nm; voltage 1.1 V; Approximation algorithms; Approximation methods; Arrays; CMOS integrated circuits; Capacitance; Capacitors; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference (A-SSCC), 2013 IEEE Asian
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-0277-4
Type :
conf
DOI :
10.1109/ASSCC.2013.6691040
Filename :
6691040
Link To Document :
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