Title :
A power-gated MPU with 3-microsecond entry/exit delay using MTJ-based nonvolatile flip-flop
Author :
Koike, Hideaki ; Ohsawa, Takashi ; Ikeda, Shoji ; Hanyu, Takahiro ; Ohno, Hideo ; Endoh, Tetsuo ; Sakimura, Noboru ; Nebashi, Ryusuke ; Tsuji, Yukihide ; Morioka, Ayuka ; Miura, Shun ; Honjo, Hiroaki ; Sugibayashi, Tadahiko
Author_Institution :
Center for Spintronics Integrated Syst., Tohoku Univ., Sendai, Japan
Abstract :
We propose a novel power-gated microprocessor unit (MPU) using a nonvolatile flip-flop (NV-F/F) with magnetic tunnel junction (MTJ). By using the NV-F/F to store the MPU´s internal state, this MPU realizes power-gating operation with a small 3-microsecond entry/exit delay penalty in power-on/power-off, which is one order of magnitude faster than a conventional MPU´s deep power down mode. To achieve this short entry/exit delay, an appropriate NV-F/F circuit, which can perform stable high speed store/recall operations, has been developed. The MPU will help in the realization of low power systems because of its easy controllability for the power gating mode.
Keywords :
flip-flops; low-power electronics; magnetic tunnelling; microprocessor chips; MTJ-based nonvolatile flip-flop; NV-F-F circuit; deep power down mode; entry delay penalty; exit delay penalty; high speed store-recall operations; internal state; low power systems; magnetic tunnel junction; power-gated MPU; power-gated microprocessor unit; power-off; power-on; Clocks; Delays; Integrated circuit modeling; Latches; MOS devices; Magnetic tunneling; Nonvolatile memory; MPU; MTJ; flip-flop; nonvolatile; power gating;
Conference_Titel :
Solid-State Circuits Conference (A-SSCC), 2013 IEEE Asian
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-0277-4
DOI :
10.1109/ASSCC.2013.6691046