DocumentCode :
658978
Title :
Optimally minimizing overlay violation in self-aligned double patterning decomposition for row-based standard cell layout in polynomial time
Author :
Zigang Xiao ; Yuelin Du ; Haitong Tian ; Wong, Martin D. F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
fYear :
2013
fDate :
18-21 Nov. 2013
Firstpage :
32
Lastpage :
39
Abstract :
Self-aligned double patterning is one of the most promising double patterning techniques for sub-20nm nodes. As in any multiple patterning techniques, layout decomposition is the most important problem. In SADP decomposition, overlay is among the most primary concerns. Most of the existing works target at minimizing the overall overlay, while others totally forbid the overlay. On the other hand, most of the works either rely on exponential time methods, or apply heuristic that cannot guarantee to find a solution. In this paper, we consider the SADP decomposition problem in row-based standard cell layout, where the overlay violations are minimized. Although SADP decomposition has been shown to be NP-hard in general, we showed that it can be solved in polynomial time when the layout is row-based standard cells. We propose a polynomial time optimal algorithm that finds a decomposition with minimum overlay violations. The efficiency of our method is further demonstrated by the experimental results.
Keywords :
circuit layout; computational complexity; immersion lithography; nanopatterning; polynomials; NP-hard problem; SADP decomposition problem; exponential time methods; layout decomposition; overlay violations; polynomial time optimal algorithm; row-based standard cell layout; self-aligned double patterning decomposition problem; Algorithm design and analysis; Computer aided manufacturing; Layout; Merging; Polynomials; Shape; Standards;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design (ICCAD), 2013 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
ISSN :
1092-3152
Type :
conf
DOI :
10.1109/ICCAD.2013.6691094
Filename :
6691094
Link To Document :
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