DocumentCode
659024
Title
Methodology for standard cell compliance and detailed placement for triple patterning lithography
Author
Bei Yu ; Xiaoqing Xu ; Jhih-Rong Gao ; Pan, David Z.
Author_Institution
ECE Dept., Univ. of Texas at Austin, Austin, TX, USA
fYear
2013
fDate
18-21 Nov. 2013
Firstpage
349
Lastpage
356
Abstract
As the feature size of semiconductor process further scales to sub-16nm technology node, triple patterning lithography (TPL) has been regarded one of the most promising lithography candidates. M1 and contact layers, which are usually deployed within standard cells, are most critical and complex parts for modern digital designs. Traditional design flow that ignores TPL in early stages may limit the potential to resolve all the TPL conflicts. In this paper, we propose a coherent framework, including standard cell compliance and detailed placement to enable TPL friendly design. Considering TPL constraints during early design stages, such as standard cell compliance, improves the layout decomposability. With the pre-coloring solutions of standard cells, we present a TPL aware detailed placement, where the layout decomposition and placement can be resolved simultaneously. Our experimental results show that, with negligible impact on critical path delay, our framework can resolve the conflicts much more easily, compared with the traditional physical design flow and followed layout decomposition.
Keywords
nanolithography; nanopatterning; M1; contact layers; modern digital designs; semiconductor process; size 16 nm; standard cell compliance; triple patterning lithography; Color; Law; Layout; Libraries; Standards; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design (ICCAD), 2013 IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Type
conf
DOI
10.1109/ICCAD.2013.6691142
Filename
6691142
Link To Document