• DocumentCode
    659024
  • Title

    Methodology for standard cell compliance and detailed placement for triple patterning lithography

  • Author

    Bei Yu ; Xiaoqing Xu ; Jhih-Rong Gao ; Pan, David Z.

  • Author_Institution
    ECE Dept., Univ. of Texas at Austin, Austin, TX, USA
  • fYear
    2013
  • fDate
    18-21 Nov. 2013
  • Firstpage
    349
  • Lastpage
    356
  • Abstract
    As the feature size of semiconductor process further scales to sub-16nm technology node, triple patterning lithography (TPL) has been regarded one of the most promising lithography candidates. M1 and contact layers, which are usually deployed within standard cells, are most critical and complex parts for modern digital designs. Traditional design flow that ignores TPL in early stages may limit the potential to resolve all the TPL conflicts. In this paper, we propose a coherent framework, including standard cell compliance and detailed placement to enable TPL friendly design. Considering TPL constraints during early design stages, such as standard cell compliance, improves the layout decomposability. With the pre-coloring solutions of standard cells, we present a TPL aware detailed placement, where the layout decomposition and placement can be resolved simultaneously. Our experimental results show that, with negligible impact on critical path delay, our framework can resolve the conflicts much more easily, compared with the traditional physical design flow and followed layout decomposition.
  • Keywords
    nanolithography; nanopatterning; M1; contact layers; modern digital designs; semiconductor process; size 16 nm; standard cell compliance; triple patterning lithography; Color; Law; Layout; Libraries; Standards; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design (ICCAD), 2013 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Type

    conf

  • DOI
    10.1109/ICCAD.2013.6691142
  • Filename
    6691142