DocumentCode
659050
Title
A Vectorless framework for power grid electromigration checking
Author
Fawaz, Mohammad ; Chatterjee, Saptarshi ; Najm, Farid N.
Author_Institution
Dept. of ECE, Univ. of Toronto, Toronto, ON, Canada
fYear
2013
fDate
18-21 Nov. 2013
Firstpage
553
Lastpage
560
Abstract
Electromigration (EM) in the on-die metal lines has re-emerged as a significant concern in modern VLSI circuits. The higher levels of temperature on die and the very large number of metal lines, coupled with the conservatism inherent in traditional EM checking strategies, have led to a situation where trying to guarantee EM reliability often leads to unacceptably conservative designs that may not meet the area or performance specs. Due to unidirectional currents, this problem is most significant in the power and ground grids. Thus, this work is aimed at reducing the pessimism in EM prediction for power/ground grids. There are two sources for the high pessimism: 1) the use of the traditional series model for EM checking and 2) pessimistic assumptions about the chip workload and the corresponding supply currents. To address this problem, we propose a framework for EM checking that allows users to specify conditions-of-use type constraints that help capture realistic chip workload and which includes the use of a novel mesh model for EM prediction in the grid, instead of the traditional series model.
Keywords
VLSI; electromigration; integrated circuit modelling; EM checking strategies; EM reliability; chip workload; ground grids; mesh model; modern VLSI circuits; on-die metal lines; power grid electromigration checking; supply currents; traditional series model; unidirectional currents; vectorless framework; Electromigration; Integrated circuit modeling; Metals; Monte Carlo methods; Power grids; Solid modeling; Vectors; Electromigration; Optimization; Power grid; Redundancy; Verification;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design (ICCAD), 2013 IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Type
conf
DOI
10.1109/ICCAD.2013.6691170
Filename
6691170
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