Title :
A comparative analysis of FETToy simulation of CNTFET characteristics
Author :
Sinha, Sujeet Kumar ; Chaudhury, Santanu
Author_Institution :
Dept. of EE, NIT, Silchar, India
Abstract :
In this paper we analyse the effect of gate oxide thickness on various characteristics of CNTFET. Carbon nanotube based FET devices are more and more important today because of their improved gate capacitance. In nanometre regime quantum capacitance plays the major role for calculating the gate capacitance of a Device. After analysis of FETToy simulation, we found some favourable characteristics of gate capacitance which is decreasing, while reducing the oxide thickness and also observed larger drain current while reducing the oxide thickness, which is not possible to get in MOSFET.
Keywords :
MOSFET; carbon nanotube field effect transistors; nanoelectronics; C; CNTFET characteristics; FETToy simulation; MOSFET; drain current; gate capacitance; gate oxide thickness; nanometre regime quantum capacitance; CNTFETs; Carbon nanotubes; Logic gates; MOSFET; Quantum capacitance; Threshold voltage; CNTFET; MOSFET; drain current; gate-oxide-thickness; quantum capacitance;
Conference_Titel :
Emerging Trends and Applications in Computer Science (ICETACS), 2013 1st International Conference on
Conference_Location :
Shillong
Print_ISBN :
978-1-4673-5249-9
DOI :
10.1109/ICETACS.2013.6691396
