DocumentCode
66079
Title
Topology Optimization of Stressed Capacitive RF MEMS Switches
Author
Philippine, M.A. ; Sigmund, O. ; Rebeiz, Gabriel M. ; Kenny, Thomas W.
Author_Institution
Mech. Eng. Dept., Stanford Univ., Stanford, CA, USA
Volume
22
Issue
1
fYear
2013
fDate
Feb. 2013
Firstpage
206
Lastpage
215
Abstract
Geometry design can improve a capacitive radio-frequency microelectromechanical system switch´s reliability by reducing the impacts of intrinsic biaxial stresses and stress gradients on the switch´s membrane. Intrinsic biaxial stresses cause stress stiffening, whereas stress gradients cause out-of-plane curling. We use topology optimization to systematically generate designs, by minimizing stress stiffening, minimizing curling, or minimizing stress stiffening while constraining the curling behavior. We present the corresponding problem formulations and sensitivity derivations and discuss the role of key elements in the problem formulation.
Keywords
microswitches; capacitive radiofrequency microelectromechanical system switch reliability; curling minimization; geometry design; intrinsic biaxial stresses; sensitivity derivations; stress gradients; stress stiffening minimization; stressed capacitive RF MEMS switches; switch membrane; topology optimization; Optimization; Radio frequency; Sensitivity; Solids; Stress; Switches; Topology; Geometry design; intrinsic stress; mechanical design; radio-frequency microelectromechanical systems (RF MEMS); stress gradient; topology optimization;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/JMEMS.2012.2224640
Filename
6353106
Link To Document