DocumentCode :
661526
Title :
Trench shielded planar gate IGBT (TSPG-IGBT) for low loss and robust short-circuit capalibity
Author :
Jun Hu ; Bobde, Madhur ; Yilmaz, Hamza ; Bhalla, Anup
Author_Institution :
Alpha & Omega Semicond., Sunnyvale, CA, USA
fYear :
2013
fDate :
26-30 May 2013
Firstpage :
25
Lastpage :
28
Abstract :
A trench shielded planar gate IGBT is proposed in this paper. The unique 3D top cell structure, combining high density trench and low channel density, offers an excellent conduction vs. switching loss trade-off and a significantly better Short-circuit SOA compared to trench IEGTs. Measurements on fabricated devices show a 0.1V lower VCESAT for the same Eoff, and a 2x improvement in short circuit SOA.
Keywords :
insulated gate bipolar transistors; short-circuit currents; 3D top cell structure; TSPG-IGBT; conduction loss trade-off; high density trench; low channel density; low loss short-circuit capability; robust short-circuit capability; short-circuit SOA; switching loss trade-off; trench IEGTs; trench shielded planar gate IGBT; Current density; Insulated gate bipolar transistors; Logic gates; Power semiconductor devices; Semiconductor optical amplifiers; Temperature; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
ISSN :
1943-653X
Print_ISBN :
978-1-4673-5134-8
Type :
conf
DOI :
10.1109/ISPSD.2013.6694390
Filename :
6694390
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=661526
بازگشت