Title :
A novel high voltage Pch-MOS with a new drain drift structure for 1200V HVICs
Author :
Yoshino, M. ; Shimizu, K.
Author_Institution :
Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
A new 1200V Pch-MOS having a new drain structure is proposed. Our proposing new 1200V Pch-MOS improves a substrate leak problem which occurred in conventional one without sacrificing a breakdown voltage and an output current. Thanks to the new Pch-MOS, a 1200V HVIC which provides a high voltage level-shifting from high voltage region to low voltage region is successfully realized.
Keywords :
power integrated circuits; power semiconductor devices; HVIC; breakdown voltage; drain drift structure; high voltage Pch-MOS; high voltage level-shifting; high voltage region; output current; substrate leak problem; voltage 1200 V; Breakdown voltage; Impurities; Junctions; Logic gates; Low voltage; Prototypes; Substrates;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
Print_ISBN :
978-1-4673-5134-8
DOI :
10.1109/ISPSD.2013.6694401
