DocumentCode :
661538
Title :
Low voltage MOSFET optimized for low VDS transient voltages
Author :
Rutter, P. ; Peake, S. ; Elford, A.
Author_Institution :
NXP Semicond., Stockport, UK
fYear :
2013
fDate :
26-30 May 2013
Firstpage :
83
Lastpage :
86
Abstract :
A 30V power MOSFET technology, employing a low voltage superjunction approach, has been optimized for operation as a low-side switch in a DC-DC buck converter. In particular, this technology has been designed with an emphasis on minimizing the voltage overshoots that occur in high efficiency DC-DC converters by modification of the MOSFET´s body diode and output capacitance, COSS. This has resulted in a significant reduction in VDS overshoot of ≈50%.
Keywords :
DC-DC power convertors; low-power electronics; power MOSFET; DC-DC buck converter; low VDS transient voltages; low voltage MOSFET; low voltage superjunction approach; low-side switch; power MOSFET technology; voltage 30 V; voltage overshoots; Capacitance; Low voltage; MOSFET; Schottky diodes; Snubbers; Switches; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
ISSN :
1943-653X
Print_ISBN :
978-1-4673-5134-8
Type :
conf
DOI :
10.1109/ISPSD.2013.6694402
Filename :
6694402
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=661538
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