• DocumentCode
    661545
  • Title

    Potential of diamond power devices

  • Author

    Yamasaki, S. ; Makino, T. ; Takeuchi, D. ; Ogura, M. ; Kato, H. ; Matsumoto, T. ; Iwasaki, T. ; Hatano, M. ; Suzuki, M. ; Koizumi, S. ; Ohashi, H. ; Okushi, H.

  • Author_Institution
    Energy Technol. Res. Inst., AIST, Tsukuba, Japan
  • fYear
    2013
  • fDate
    26-30 May 2013
  • Firstpage
    307
  • Lastpage
    310
  • Abstract
    For the next generation power devices, we have developed several types of unique diamond power devices. By these device performances, we conclude that by using the unique properties of diamond in addition to the superior structural FOM (figure of merit) the diamond power devices have high potential for the power devices. We discuss the potential of diamond power devices, specially, for ultra-high voltage application.
  • Keywords
    diamond; power semiconductor devices; C; FOM; figure of merit; power semiconductor device; ultrahigh voltage application; Conductivity; Diamonds; Doping; Films; Plasma temperature; Switches; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
  • Conference_Location
    Kanazawa
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4673-5134-8
  • Type

    conf

  • DOI
    10.1109/ISPSD.2013.6694410
  • Filename
    6694410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=661545