Approach to the silicon limit: Advanced NLDMOS in 0.13 μm SOI technology for automotive and industrial applications up to 110V

We report our development of a novel NLDMOS in SOI based smart power technology, integrated into Freescale´s 0.13μm CMOS platform. The new NLDMOS not only achieves BVDSS up to 140V in both low side and high side operations, but more importantly, the Rdson*Area is able to shrink at least 35-40% below the current benchmark, which is the lowest reported for BVDSS ranging from 50V to 138V. For the first time, we demonstrated LDMOS devices which approach the Si limit. The devices also achieve very competitive performance in both SOA and the reliability tests under HCI stress as well as high temperature reverse bias (HTRB) stress.