Title :
Integrated 85V rated complimentary LDMOS devices utilizing patterned field plate structures for best-in-class performance in network communication applications
Author :
Sharma, Santosh ; Yun Shi ; Zierak, Michael ; Cook, Don ; Phelps, Rick ; Letavic, Theodode ; Feilchenfeld, Natalie
Author_Institution :
Analog & Mixed Signal Dev., IBM Microelectron., Essex Junction, VT, USA
Abstract :
This paper presents complimentary 85V-rated LDMOS devices integrated in a 180nm power management technology platform. The devices are fabricated using a design technique which utilizes tapered dielectric regions in combination with patterned floating field plated structures. The performance of the new structures are compared to conventional LDMOS structures and it shown that the floating field plated structures have superior BVds-Ron, sp, HCI reliability, and forward safe operating area figures-of-merit. These devices exhibit best-in-class BVds-Ron, sp figure-of-merit (NLDMOS : BVds=130V/Ron, sp=195mΩ.mm2 and PLDMOS : BVds=140V/Ron, sp=530mΩ.mm2) and hot carrier reliability in excess of 10 years analog lifetime for rated VDS = 85V and full range of VGS. These devices enable cost effective integration of PoE systems with multiple interface channels and auxiliary switching regulators.
Keywords :
hot carriers; power integrated circuits; power semiconductor devices; semiconductor device reliability; HCI reliability; analog lifetime; auxiliary switching regulators; forward safe operating area figures-of-merit; hot carrier reliability; integrated rated complimentary LDMOS devices; multiple interface channels; network communication applications; patterned field plate structures; power management technology platform; size 180 nm; tapered dielectric regions; voltage 85 V; Dielectrics; Electric fields; Hot carriers; Impact ionization; Logic gates; Metals; Performance evaluation; LDMOS; dual gate oxide; forward safe operating area; hot carrier induced drift; patterned field plates;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
Print_ISBN :
978-1-4673-5134-8
DOI :
10.1109/ISPSD.2013.6694423