Correlation between MR-DCIV current and high-voltage-stress-induced degradation in LDMOSFETs

MR-DCIV current has demonstrated the nondestructive capability to profile the interface states along the channel, accumulation and STI regions in high-voltage LDMOSFET. The correlation between interface state and MR-DCIV current has been studied under high voltage stresses in LDMOSFETs. Our study results show that RO_N degradation is mainly affected by newly-generated interface states in the STI region. Compare to the PBTI with higher gate voltage, OFF-state stress with higher drain voltage would become the worst degradation condition in an STI-based nLDMOSFETs.