DocumentCode :
661562
Title :
200V superjunction lateral IGBT fabricated on partial SOI
Author :
Tee, E. Kho Ching ; Hoelke, A. ; Pilkington, S. ; Pal, D.K. ; Antoniou, M. ; Udrea, F. ; bin Wan Zainal Abidin, Wan Azlan ; Ng Liang Yew
Author_Institution :
Dept. of Technol., X-FAB Sarawak Sdn. Bhd., Kuching, Malaysia
fYear :
2013
fDate :
26-30 May 2013
Firstpage :
389
Lastpage :
392
Abstract :
A 200V lateral insulated gate bipolar transistor (LIGBT) was successfully developed using lateral superjunction (SJ) in 0.18μm partial silicon on insulator (SOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations. For an n-type lateral SJ LIGBT, the p layer in the SJ drift region helps in achieving uniform electric field distribution. Furthermore, the p-pillar contributes to the on-state current. Furthermore, the p-pillar contributes to sweep out holes during the turn-off process, thus leading to faster removal of plasma. To realize this device, one additional mask layer is required in the X-FAB 0.18μm partial SOI HV process.
Keywords :
insulated gate bipolar transistors; numerical analysis; semiconductor junctions; silicon-on-insulator; SJ drift region; X-FAB partial SOI HV process; extensive experimental measurements; lateral insulated gate bipolar transistor; mask layer; n-type lateral SJ LIGBT; numerical simulations; on-state current; p-layer; p-pillar; partial silicon on insulator HV process; plasma removal; size 0.18 mum; superjunction lateral IGBT; turn-off process; uniform electric field distribution; voltage 200 V; Anodes; Current measurement; Insulated gate bipolar transistors; Junctions; Logic gates; Silicon-on-insulator; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
ISSN :
1943-653X
Print_ISBN :
978-1-4673-5134-8
Type :
conf
DOI :
10.1109/ISPSD.2013.6694427
Filename :
6694427
Link To Document :
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