New source-side breakdown mechanism in AlGaN/GaN insulated-gate HEMTs

Author

Bahl, Sandeep R. ; Van Hove, Marleen ; Xuanwu Kang ; Marcon, Denis ; Zahid, Mohammed ; Decoutere, Stefaan

Author_Institution

Texas Instrum., Santa Clara, CA, USA

fYear

2013

fDate

26-30 May 2013

Firstpage

419

Lastpage

422

Abstract

We find that off-state breakdown in AlGaN/GaN insulated-gate HEMTs can occur at the source-side of the gate with increase in the drain voltage. This new finding is borne out by extensive electrical measurements and confirmed with the OBIRCH (Optical Beam Induced Resistance CHange) technique. It is explained by a hypothesis whereby holes generated at high Vds flow to the source-side of the gate, and due to the low valence band offset, enter the gate insulator and damage it. Holes also cause threshold voltage shifts that turn the device on. The damage occurs in discrete spots, as would be expected by defects. Finally, we show improved breakdown voltage with a better gate-dielectric interface.

Keywords

III-V semiconductors; aluminium compounds; electric breakdown; gallium compounds; high electron mobility transistors; insulation; wide band gap semiconductors; AlGaN-GaN; OBIRCH technique; drain voltage; electrical measurement; gate-dielectric interface; insulated-gate HEMT; low valence band offset; off-state breakdown; optical beam induced resistance change technique; source-side breakdown mechanism; threshold voltage shift; Aluminum gallium nitride; Aluminum oxide; Electric breakdown; Gallium nitride; HEMTs; Logic gates; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on

Conference_Location

Kanazawa

ISSN

1943-653X

Print_ISBN

978-1-4673-5134-8

Type

conf

DOI

10.1109/ISPSD.2013.6694434

Filename

6694434