A high reliable reverse-conducting IGBT with a floating P-plug

Author

Weizhong Chen ; Zehong Li ; Min Ren ; JinPing Zhang ; Bo Zhang ; Yong Liu ; Qing Hua ; Kun Mao ; Zhaoji Li

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China

fYear

2013

fDate

26-30 May 2013

Firstpage

265

Lastpage

268

Abstract

A current distribution model is presented for the RC-IGBTs both at IGBT mode and DIODE mode. According to the analytical model, smaller cell size would be better for the distribution of the current density and full utilization of the silicon, but the snapback would be worse. Then a novel RC-IGBT with a floating P-plug is proposed and investigated by simulations. The results show that it can suppress the snapback phenomena effectively. More importantly, the silicon utilization ratio is much higher than the others RC-IGBTs and the current is uniformly distributed in the whole wafer both at IGBT mode and DIODE mode that ensured the high temperature reliability of the RC-IGBT.

Keywords

current distribution; insulated gate bipolar transistors; power semiconductor diodes; semiconductor device models; cell size; current density; current distribution model; diode mode; floating P-plug; high reliable reverse-conducting IGBT; high temperature reliability; snapback phenomena; Current density; Current distribution; Insulated gate bipolar transistors; Logic gates; Simulation; Temperature distribution; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on

Conference_Location

Kanazawa

ISSN

1943-653X

Print_ISBN

978-1-4673-5134-8

Type

conf

DOI

10.1109/ISPSD.2013.6694437

Filename

6694437