Title :
Low gate capacitance IEGT with Trench Shield Emitter (IEGT-TSE) realizing high frequency operation
Author :
Matsushita, Ken´ichi ; Ninomiya, Hideaki ; Naijo, Tatsuo ; Izumi, Masato ; Umekawa, Shinichi
Author_Institution :
Toshiba Corp., Ibo, Japan
Abstract :
A novel IEGT (Injection Enhanced Gate Transistor) design for drastically reducing of gate capacitance has been proposed in this work. The device structure named IEGT-TSE (IEGT with Trench Shield Emitter) has a dummy trench electrode connected to an emitter electrode. It shields gate electrode from floating p-well during switching. To demonstrate this effect, we exhibit switching waveforms by a numerical simulation and a fabricated device at 1200 blocking voltage class.
Keywords :
capacitance; electrodes; insulated gate field effect transistors; numerical analysis; switches; IEGT-TSE; dummy trench electrode; emitter electrode; high frequency operation; injection enhanced gate transistor; low gate capacitance IEGT; numerical simulation; switching waveforms; trench shield emitter; Capacitance; Electrodes; Energy loss; Integrated circuits; Logic gates; Switches;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
Print_ISBN :
978-1-4673-5134-8
DOI :
10.1109/ISPSD.2013.6694438
