Title :
Novel 200V power devices with large current capability and high reliability by inverted HV-well SOI technology
Author :
Siyang Liu ; Weifeng Sun ; Tingting Huang ; Chunwei Zhang
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Abstract :
Novel 200V power devices, including the n-type lateral insulator gate bipolar transistor (nLIGBT), the n-type lateral extended drain MOS (nLEDMOS) and the p-type lateral extended drain MOS (pLEDMOS), have been fabricated by using the special 0.5μm inverted HV-well SOI technology. All the novel devices own larger current density, higher off-state breakdown voltage (BV) and better hot-carrier reliability comparing with the conventional devices. The improved devices have been successfully used for the plasma display panel (PDP) scan driver IC and reduce the chip size by 27%.
Keywords :
MOSFET; insulated gate bipolar transistors; power semiconductor devices; semiconductor device breakdown; semiconductor device reliability; silicon-on-insulator; breakdown voltage; hot carrier reliability; inverted high voltage well SOI technology; large current capability; lateral extended drain MOS; lateral insulator gate bipolar transistor; nLEDMOS; nLIGBT; plasma display panel; power device; scan driver IC; size 0.5 mum; voltage 200 V; Current density; Degradation; Hot carriers; Integrated circuits; Leakage currents; Reliability; Stress;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
Print_ISBN :
978-1-4673-5134-8
DOI :
10.1109/ISPSD.2013.6694442
