Novel 200V power devices with large current capability and high reliability by inverted HV-well SOI technology

Author

Siyang Liu ; Weifeng Sun ; Tingting Huang ; Chunwei Zhang

Author_Institution

Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China

fYear

2013

fDate

26-30 May 2013

Firstpage

115

Lastpage

118

Abstract

Novel 200V power devices, including the n-type lateral insulator gate bipolar transistor (nLIGBT), the n-type lateral extended drain MOS (nLEDMOS) and the p-type lateral extended drain MOS (pLEDMOS), have been fabricated by using the special 0.5μm inverted HV-well SOI technology. All the novel devices own larger current density, higher off-state breakdown voltage (BV) and better hot-carrier reliability comparing with the conventional devices. The improved devices have been successfully used for the plasma display panel (PDP) scan driver IC and reduce the chip size by 27%.

Keywords

MOSFET; insulated gate bipolar transistors; power semiconductor devices; semiconductor device breakdown; semiconductor device reliability; silicon-on-insulator; breakdown voltage; hot carrier reliability; inverted high voltage well SOI technology; large current capability; lateral extended drain MOS; lateral insulator gate bipolar transistor; nLEDMOS; nLIGBT; plasma display panel; power device; scan driver IC; size 0.5 mum; voltage 200 V; Current density; Degradation; Hot carriers; Integrated circuits; Leakage currents; Reliability; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on

Conference_Location

Kanazawa

ISSN

1943-653X

Print_ISBN

978-1-4673-5134-8

Type

conf

DOI

10.1109/ISPSD.2013.6694442

Filename

6694442