Title :
700V thin SOI-LIGBT with high current capability
Author :
Jing Zhu ; Weifeng Sun ; Qinsong Qian ; Lu Cao ; Nailong He ; Sen Zhang
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Abstract :
The tridimensional channel SOI-LIGBT on 1.5μm thin SOI layer is developed in this paper. The key feature of the device is that there are numerous separated P-body cells located in the emitter region, which can increase the efficient channel width, enhance electron injection and attain a large current capability. The proposed SOI-LIGBT exhibits the current density of 150A/cm2, which has an improvement of 150% compared with the conventional structure. The SOI-LIGBT structure can be well applied in high voltage integrated circuit (HVIC).
Keywords :
current density; elemental semiconductors; insulated gate bipolar transistors; silicon; silicon-on-insulator; HVIC; Si; current density; electron injection enhance; emitter region; high voltage integrated circuit; numerous separated P-body cell; size 1.5 mum; tridimensional channel thin SOI-LIGBT layer; voltage 700 V; Current density; Insulated gate bipolar transistors; Integrated circuits; Logic gates; Power semiconductor devices; Scanning electron microscopy; Substrates;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
Print_ISBN :
978-1-4673-5134-8
DOI :
10.1109/ISPSD.2013.6694443
