Title :
HB1340 ℄ Advanced 0.13um BCDMOS technology of complimentary LDMOS including fully isolated transistors
Author :
Kwang-Sik Ko ; Sang-Hyun Lee ; Dea-Hoon Kim ; Ji-Na Eum ; Sung-Kun Park ; In-Wook Cho ; Jong-Hwan Kim ; Kyung-Dong Yoo
Author_Institution :
Technol. Dev. Team, SK hynix Inc., Cheongju, South Korea
Abstract :
In this work, we developed a HB1340-0.13um BCD technology of the complimentary LDMOS including fully isolated structure device with dual drift layer. We could achieve LDMOS with best-in-class trade-off between specific on-resistance and breakdown voltage by its optimized drain engineering. The HB1340 process in 0.13um 1.5V/5V/6V CMOS technology platform can provide various kinds of high voltage devices such as LDMOS, DEMOS from 12V to 40V and fully isolated 24V LDNMOS for mobile and display power application. High gain BJT, Zener diode, high voltage diode, high resistor, MIM and EEPROM are also have been integrated in smart power technology.
Keywords :
CMOS integrated circuits; EPROM; MIM devices; Zener diodes; bipolar integrated circuits; power bipolar transistors; power integrated circuits; power semiconductor diodes; resistors; semiconductor device breakdown; BJT; CMOS technology platform; DEMOS; EEPROM; HB1340; MIM; Zener diode; advanced BCDMOS technology; breakdown voltage; complimentary LDMOS; dual drift layer; fully isolated transistors; high resistor; high voltage diode; isolated structure device; size 0.13 mum; smart power technology; specific on-resistance; voltage 1.5 V to 40 V; Active matrix organic light emitting diodes; CMOS integrated circuits; EPROM; Electrodes; Logic gates; Semiconductor optical amplifiers; Transmission line measurements;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
Print_ISBN :
978-1-4673-5134-8
DOI :
10.1109/ISPSD.2013.6694453
