Title :
Design optimization of field-plate assisted RESURF devices
Author :
Boksteen, B.K. ; Ferrara, A. ; Heringa, A. ; Steeneken, P.G. ; Koops, G.E.J. ; Hueting, R.J.E.
Author_Institution :
MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands
Abstract :
A mathematical model for optimizing the 2-D potential distribution in the drift region of field-plate (FP)-assisted RESURF devices (Fig. 1) is presented. The proposed model extends earlier work [1-2] by including top-bottom dielectric asymmetry (typical in SOI devices [3]), non-zero field plate potentials VFP and grading of design parameters other than drift region doping. This generally-applicable, TCAD-verified [4], model provides a guideline for optimizing the drain extension in a wide range of FP-assisted RESURF devices.
Keywords :
optimisation; power semiconductor devices; semiconductor device models; technology CAD (electronics); 2-D potential distribution; TCAD-verified model; design optimization; drift region; drift region doping; field-plate assisted RESURF devices; mathematical model; nonzero field plate potentials; top-bottom dielectric asymmetry; Dielectrics; Doping; Electric breakdown; Junctions; Mathematical model; Optimization; Semiconductor process modeling;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
Print_ISBN :
978-1-4673-5134-8
DOI :
10.1109/ISPSD.2013.6694460
