DocumentCode :
661597
Title :
Interdigitated LDMOS
Author :
Jaejune Jang ; Kyu-Heon Cho ; Dongeun Jang ; Minhwan Kim ; Changjoon Yoon ; Junsung Park ; Hyunsil Oh ; Chiho Kim ; Hyoungsoo Ko ; Keunho Lee ; Sangbae Yi
Author_Institution :
Samsung Electron., Yongin, South Korea
fYear :
2013
fDate :
26-30 May 2013
Firstpage :
245
Lastpage :
248
Abstract :
Novel Interdigitated LDMOS is experimented resulting in best in class RSP-BVDSS performance (21.8mΩ-mm2 with BVDSS of 47V) in comparison to published LDMOS. RSP improvement is made through additional current path by removing STI region in drift area. Breakdown voltage is maintained with lateral field plate effect from side of the current path. Proposed Interdigitated LDMOS satisfies reliability criteria (HCI, snap back) as 40V device. All of this is obtained without any process change.
Keywords :
MOS integrated circuits; electric breakdown; integrated circuit reliability; HCI; RSP-BVDSS performance; STI region removal; breakdown voltage; interdigitated LDMOS; lateral field plate effect; reliability; voltage 40 V; voltage 47 V; Capacitance; Fingers; Human computer interaction; Logic gates; Performance evaluation; Reliability; Three-dimensional displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on
Conference_Location :
Kanazawa
ISSN :
1943-653X
Print_ISBN :
978-1-4673-5134-8
Type :
conf
DOI :
10.1109/ISPSD.2013.6694462
Filename :
6694462
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=661597
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