• DocumentCode
    661953
  • Title

    Achieving linearity for outphasing amplifiers targeting LTE applications and beyond

  • Author

    Hone, Thomas M. ; Aref, Ahmed F. ; Junqing Guan ; Negra, Renato

  • Author_Institution
    UMIC Res. Centre, RWTH Aachen Univ., Aachen, Germany
  • fYear
    2013
  • fDate
    5-8 Nov. 2013
  • Firstpage
    444
  • Lastpage
    446
  • Abstract
    This paper analyses the impact of the level locations in a multilevel LINC transmitter on the obtainable linearity performance. Results show that by placing levels in the upper dynamic region of outphased signals, a linearity performance suitable for LTE applications and beyond can be achieved. A multilevel LINC transmitter with 5 levels is implemented using 10 W GaN CREE devices at 1.9 GHz. A 10 dB PAPR 1.4 MHz LTE signal is decomposed for outphasing and recombined to achieve an ACPR performance of -50 dBc while delivering 2 W average output power.
  • Keywords
    III-V semiconductors; Long Term Evolution; UHF amplifiers; gallium compounds; microwave amplifiers; radio transmitters; wide band gap semiconductors; GaN; GaN CREE devices; LTE applications; bandwidth 1.4 MHz; frequency 1.9 GHz; level locations; linearity; multilevel LINC transmitter; outphasing amplifiers; power 10 W; CMOS integrated circuits; Conference proceedings; Linearity; Peak to average power ratio; Power generation; Probability distribution; Transmitters; LTE; ML-LINC; Outphasing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
  • Conference_Location
    Seoul
  • Type

    conf

  • DOI
    10.1109/APMC.2013.6694825
  • Filename
    6694825