DocumentCode :
661953
Title :
Achieving linearity for outphasing amplifiers targeting LTE applications and beyond
Author :
Hone, Thomas M. ; Aref, Ahmed F. ; Junqing Guan ; Negra, Renato
Author_Institution :
UMIC Res. Centre, RWTH Aachen Univ., Aachen, Germany
fYear :
2013
fDate :
5-8 Nov. 2013
Firstpage :
444
Lastpage :
446
Abstract :
This paper analyses the impact of the level locations in a multilevel LINC transmitter on the obtainable linearity performance. Results show that by placing levels in the upper dynamic region of outphased signals, a linearity performance suitable for LTE applications and beyond can be achieved. A multilevel LINC transmitter with 5 levels is implemented using 10 W GaN CREE devices at 1.9 GHz. A 10 dB PAPR 1.4 MHz LTE signal is decomposed for outphasing and recombined to achieve an ACPR performance of -50 dBc while delivering 2 W average output power.
Keywords :
III-V semiconductors; Long Term Evolution; UHF amplifiers; gallium compounds; microwave amplifiers; radio transmitters; wide band gap semiconductors; GaN; GaN CREE devices; LTE applications; bandwidth 1.4 MHz; frequency 1.9 GHz; level locations; linearity; multilevel LINC transmitter; outphasing amplifiers; power 10 W; CMOS integrated circuits; Conference proceedings; Linearity; Peak to average power ratio; Power generation; Probability distribution; Transmitters; LTE; ML-LINC; Outphasing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
Type :
conf
DOI :
10.1109/APMC.2013.6694825
Filename :
6694825
Link To Document :
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