Silicon-based substrate-integrated waveguide-based tunable band-pass filter using interdigital MEMS capacitor

Author

Hyunseong Kang ; Sam, S. ; Ik-Jae Hyun ; Chang-Wook Baek ; Sungjoon Lim

Author_Institution

Sch. of Electr. & Electron. Eng., Coll. of Eng. Chung-Ang Univ., Seoul, South Korea

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

456

Lastpage

458

Abstract

A novel method for designing miniaturized tunable BPF filter is proposed on the basis of the SIW technology. By loading MEMS cantilevers on the metal fingers´ surface of the IDC, passband of the filter can be differently generated. The proposed structure allows relatively independent control the center frequency and the coupling coefficient. This filter is showing advantages in terms of compact size, good selectivity and stopband rejection, as well as the easy integration capability with other circuits. The proposed filter has the continuously tuning range between 23.6 GHz and 25.6 GHz with insertion between 4.59 dB to 4.13 dB.

Keywords

band-pass filters; cantilevers; capacitors; elemental semiconductors; integrated circuit design; micromechanical devices; silicon; substrate integrated waveguides; MEMS cantilevers; Si; center frequency; coupling coefficient; frequency 23.6 GHz to 25.6 GHz; integration capability; interdigital MEMS capacitor; miniaturized tunable BPF filter; silicon-based SIW-based tunable band-pass filter; substrate-integrated waveguide technology; Band-pass filters; Electromagnetic waveguides; Micromechanical devices; Microwave filters; Radio frequency; Silicon; Substrates; Band-pass filter; RF MEMS; tunable filter;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6694829

Filename

6694829