A Ka-band lumped element dual-behavior resonator (DBR) filter in standard 0.13-μm CMOS technology

Author

Xiaoming Lu ; Mouthaan, K. ; Yeo Tat Soon

Author_Institution

Nat. Univ. of Singapore, Singapore, Singapore

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

488

Lastpage

490

Abstract

A K_a-band lumped element Dual-Behavior Resonator (DBR) filter in 0.13-μm CMOS is presented. The DBR filter consists of Dual-Behavior Resonators (DBRs) and inverters connecting the DBRs. The inverters and the DBRs, which define the stopband transmission zeros, are realized by CMOS spriral inductors and metal-insulator-metal (MIM) capacitors. A second order DBR filter with two transmission zeros is designed and fabricated in standard 0.13-μm CMOS technology. The measured filter has a 3-dB bandwidth of 15% at the center frequency of 27.8 GHz. High rejections larger than 48 dB are realized at the two transmission zero frequencies of 20.2 GHz and 37 GHz.

Keywords

CMOS integrated circuits; MIM devices; capacitors; inductors; integrated circuit design; integrated circuit manufacture; integrated circuit measurement; integrated circuit technology; invertors; microwave filters; microwave integrated circuits; millimetre wave filters; millimetre wave integrated circuits; resonator filters; CMOS spiral inductor; K_a-band lumped element dual-behavior resonator filter; MIM capacitor; frequency 20.2 GHz; frequency 27.8 GHz; frequency 37 GHz; gain 3 dB; inverter; metal-insulator-metal capacitor; second order DBR filter; size 0.13 mum; standard CMOS technology; stopband transmission zero; Band-pass filters; CMOS integrated circuits; Distributed Bragg reflectors; Filtering theory; Loss measurement; Microwave filters; Resonator filters; Bandpass filter (BPF); CMOS technology; Dual-Behavior Resonator (DBR); lumped element;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6694840

Filename

6694840