DocumentCode
661977
Title
Graphene materials and devices for terahertz science and technology
Author
Otsuji, Taiichi ; Suemitsu, M. ; Ryzhii, Victor
Author_Institution
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear
2013
fDate
5-8 Nov. 2013
Firstpage
515
Lastpage
517
Abstract
This article reviews recent advances in graphene-based materials and devices for terahertz science and technology. The fundamental basis of the optoelectronic properties of graphene is first introduced. Then the synthesis and crystallographic characterization of graphene materials, particularly focused on the authors´ original heteroepitaxial graphene-on-silicon technology, are briefly described. Then nonequilibrium carrier relaxation and recombination dynamics in optically or electrically pumped graphene is discussed to introduce the possibility of negative dynamic conductivity toward the creation of graphene terahertz lasers. Unique terahertz dynamics of the two-dimensional plasmons in graphene are also addressed.
Keywords
crystallography; elemental semiconductors; graphene; optical conductivity; optical pumping; optoelectronic devices; plasmons; silicon; submillimetre wave lasers; terahertz materials; terahertz wave devices; C-Si; crystallographic characterization; electrically pumped graphene; graphene device; graphene material; graphene terahertz laser; heteroepitaxial graphene-on-silicon technology; negative dynamic conductivity; nonequilibrium carrier relaxation; optically pumped graphene; optoelectronic property; recombination dynamics; terahertz science and technology; two-dimensional plasmon; Conductivity; Graphene; Optical pumping; Photonics; Plasmons; Stimulated emission; Substrates; Graphene; laser; plasmon; terahertz; two dimensional electrons;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location
Seoul
Type
conf
DOI
10.1109/APMC.2013.6694849
Filename
6694849
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