DocumentCode :
661977
Title :
Graphene materials and devices for terahertz science and technology
Author :
Otsuji, Taiichi ; Suemitsu, M. ; Ryzhii, Victor
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fYear :
2013
fDate :
5-8 Nov. 2013
Firstpage :
515
Lastpage :
517
Abstract :
This article reviews recent advances in graphene-based materials and devices for terahertz science and technology. The fundamental basis of the optoelectronic properties of graphene is first introduced. Then the synthesis and crystallographic characterization of graphene materials, particularly focused on the authors´ original heteroepitaxial graphene-on-silicon technology, are briefly described. Then nonequilibrium carrier relaxation and recombination dynamics in optically or electrically pumped graphene is discussed to introduce the possibility of negative dynamic conductivity toward the creation of graphene terahertz lasers. Unique terahertz dynamics of the two-dimensional plasmons in graphene are also addressed.
Keywords :
crystallography; elemental semiconductors; graphene; optical conductivity; optical pumping; optoelectronic devices; plasmons; silicon; submillimetre wave lasers; terahertz materials; terahertz wave devices; C-Si; crystallographic characterization; electrically pumped graphene; graphene device; graphene material; graphene terahertz laser; heteroepitaxial graphene-on-silicon technology; negative dynamic conductivity; nonequilibrium carrier relaxation; optically pumped graphene; optoelectronic property; recombination dynamics; terahertz science and technology; two-dimensional plasmon; Conductivity; Graphene; Optical pumping; Photonics; Plasmons; Stimulated emission; Substrates; Graphene; laser; plasmon; terahertz; two dimensional electrons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
Type :
conf
DOI :
10.1109/APMC.2013.6694849
Filename :
6694849
Link To Document :
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