Title :
An ultra low-power Q-band LNA with 50% bandwidth in WIN GaAs 0.1-μm pHEMT process
Author :
Ping-Han Ho ; Chau-Ching Chiong ; Huei Wang
Author_Institution :
Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A pHEMT Q-band low noise amplifier (LNA) for radio astronomy applications is designed, fabricated and measured. This LNA exhibits a bandwidth from 27 to 45 GHz with the small signal gain of 25 dB, and with the noise figure below 3.1 dB. The total power consumption is only 9 mA, and the figure-of-merit (FOM) is 34.2 (GHz/mW), which is highest compared with the previously published LNAs.
Keywords :
gallium arsenide; high electron mobility transistors; low noise amplifiers; low-power electronics; radioastronomy; FOM; GaAs; WIN pHEMT process; bandwidth 27 GHz to 45 GHz; current 9 mA; figure-of-merit; gain 25 dB; low noise amplifier; radio astronomy applications; ultra low-power Q-band LNA; Gain; HEMTs; Microwave amplifiers; Microwave communication; Noise figure; Radio astronomy; HEMT; MMIC; low noise amplifier; radio astronomy;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6694906
