A 1.2–2.0 GHz-band GaAs pHEMT cascode power amplifier MMIC consisting of independently biased transistors

Author

Tasaki, Satoshi ; Takayama, Yoichiro ; Ishikawa, Ryo ; Honjo, Kazuhiko

Author_Institution

Univ. of Electro-Commun., Chofu, Japan

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

722

Lastpage

724

Abstract

An L-band wideband cascode power amplifier MMIC with independently biased GaAs pHEMTs is developed. This amplifier can independently control distortion and power-efficiency, achieved a power-added efficiency (PAE) above 53% from 1.2 to 2.0 GHz and third-order intermodulation distortion (IMD3) better than -40 dBc with a maximum PAE of 33.3% for a maximum output power of 17.0 dBm, and showed superior performance compared to a conventional cascode amplifier.

Keywords

III-V semiconductors; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; gallium arsenide; high electron mobility transistors; integrated circuit design; intermodulation distortion; wideband amplifiers; GaAs; IMD3; L-band wideband cascode power amplifier MMIC; PAE; efficiency 33.3 percent; independently biased transistor; pHEMT cascode power amplifier MMIC; power-added efficiency; third-order intermodulation distortion; Gallium arsenide; Logic gates; MMICs; PHEMTs; Power amplifiers; Power generation; Voltage measurement; GaAs pHEMTs; L-band; MMICs; cascode circuit; microwave circuits; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6694909

Filename

6694909