Title :
Frequency characteristic of power efficiency for 10 W/30 W-class 2GHz band GaN HEMT amplifiers with harmonic reactive terminations
Author :
Yao, Tingfeng ; Ishikawa, Ryo ; Takayama, Yoichiro ; Honjo, Kazuhiko ; Kikuchi, Hiroaki ; Okazaki, Tadatsugi ; Ueda, Kazunori ; Otobe, Eiichiro
Author_Institution :
Univ. of Electro-Commun., Chofu, Japan
Abstract :
An increase in amplifier efficiency is generally accompanied by a narrow bandwidth characteristic, especially when used with distributed transmission lines, since higher harmonics have to be treated. The frequency dependence of harmonic reactive terminations using transmission lines has been discussed for a high-efficiency amplifier design. In simulation, the designed amplifiers showed steep efficiency degradation due to a small source-side impedance shift for the second-order harmonic frequency. Therefore, both the source- and load-side circuits have to be optimized simultaneously. Fabricated 10-W and 30-W class GaN HEMT amplifiers including DC bias circuits exhibited a maximum drain efficiency of 81% at 1.98GHz and 77% at 1.95 GHz, respectively.
Keywords :
III-V semiconductors; gallium compounds; power HEMT; power amplifiers; power transmission lines; wide band gap semiconductors; DC bias circuits; GaN; HEMT amplifiers; distributed transmission lines; efficiency 77 percent; efficiency 81 percent; frequency 1.95 GHz; frequency 1.98 GHz; frequency 2 GHz; frequency characteristic; harmonic reactive terminations; load side circuits; narrow bandwidth characteristic; power 10 W; power 30 W; power efficiency; second order harmonic frequency; source side impedance shift; steep efficiency degradation; Frequency dependence; Gallium nitride; HEMTs; Harmonic analysis; Impedance; Integrated circuit modeling; Power system harmonics; GaN HEMT; High efficiency; harmonic reactive terminations; power amplifier; wideband;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6694917
