DocumentCode :
662044
Title :
Expanding bandwidth of class-F power amplifier with harmonic structures
Author :
Teaggu Kang ; Youngcheol Park
Author_Institution :
Hankuk Univ. of Foreign Studies, Yongin, South Korea
fYear :
2013
fDate :
5-8 Nov. 2013
Firstpage :
748
Lastpage :
750
Abstract :
This paper presents a methodology for designing compact broad-band RF power amplifiers with stretched harmonic tuning output networks. Rather than adopting a conventional output matching for wideband class-F operations, which is bulky in its size, this paper suggests a simpler way to achieve small-sized but wideband class-F operation. The proposed idea is achieved by stretched harmonic tuning circuits, and is verified by implementing a power amplifier at 1.9 GHz with a 10 W GaN HEMT transistor. It showed 50 % of drain efficiency over the bandwidth of 250 MHz with significantly smaller size than the conventional continuous-mode class-F designs. The maximum output power is 14.45 W and a peak gain is 12.9 dB at 1.9 GHz.
Keywords :
III-V semiconductors; UHF power amplifiers; VHF amplifiers; circuit tuning; gallium compounds; high electron mobility transistors; network synthesis; wide band gap semiconductors; wideband amplifiers; GaN; HEMT transistor; bandwidth 250 MHz; compact broad-band RF power amplifier; continuous-mode class-F design; efficiency 50 percent; frequency 1.9 GHz; gain 12.9 dB; power 10 W; power 14.45 W; stretched harmonic tuning output circuit network; wideband class-F power amplifier; Bandwidth; Broadband amplifiers; Harmonic analysis; Impedance matching; Power amplifiers; Power transmission lines; Broadband; Class-F; Microstrip line; Output matching circuit; Power Amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
Type :
conf
DOI :
10.1109/APMC.2013.6694918
Filename :
6694918
Link To Document :
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