Title :
PMOS-switching-biased voltage-control-oscillator
Author :
Te-Feng Chiao ; Ming-Cheng Tu ; Han-Hsin Wu ; Yao-Jia Gao ; Peng Kao ; Jheng-Wei Wu ; Sing-Jhang Cai ; Chih-Ho Tu ; Sheng-Wen Chen ; Janne-Wha Wu ; Ching-Wen Tang
Author_Institution :
Dept. of Electr. Eng., Nat. Chung Cheng Univ., Chiayi, Taiwan
Abstract :
A PMOS switching-biased VCO is investigated and fabricated by using TSMC 0.35 μm CMOS technology with 2.8 V power supply voltage. A switching bias is employed for the PMOS tail transistor to improve the phase noise. Measured tuning range is ranged from 2.87 GHz to 3.2 GHz. At 1 MHz offset from the carrier, the measured phase noise is -118.2 dBc/Hz. The chip takes 0.32 mm2 area. For a 0.35mm process, under the consideration of output power, this design shows better performance over the figure of merit.
Keywords :
CMOS analogue integrated circuits; MOSFET; circuit tuning; integrated circuit noise; phase noise; voltage-controlled oscillators; PMOS switching-biased VCO; PMOS tail transistor; TSMC CMOS technology; frequency 2.87 GHz to 3.2 GHz; phase noise; size 0.35 mum; tuning range; voltage-control-oscillator; CMOS integrated circuits; Frequency measurement; Phase noise; Semiconductor device measurement; Transistors; Voltage-controlled oscillators; PMOS; Switching Bias; Voltage Control Oscillator;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6694920
