Title :
Design of UWB CMOS LNA based on current-reused topology and forward body-bias for high figure of merit
Author :
Meng-Ting Hsu ; Yu-Hua Lin ; Jing-Cheng Yang
Author_Institution :
Microwave Commun. & Radio Freq. Integrated Circuit Lab., Nat. Yunlin Univ. of Sci. & Technol., Douliou, Taiwan
Abstract :
This paper presents an UWB low noise amplifier (LNA) based on current reused and forward body-bias topology to achieve high figure of merit. The circuit was fabricated in a TSMC 0.18 μm CMOS process. The implemented LNA has a peak gain of 14.8 dB, the input reflection coefficient S11 is lower than -11.5 dB, and the output reflection S22 is lower than -10.7 dB, the minimum of the noise figure is 3.5 dB and the measurement of IIP3 is -13 dBm. It consumes 7.8mW power consumption from 1.1-V supply voltage. The figure of merit is 13.02.
Keywords :
CMOS integrated circuits; integrated circuit design; low noise amplifiers; network topology; ultra wideband technology; UWB CMOS LNA; current reused topology; forward body bias; gain 14.8 dB; high figure of merit; low noise amplifier; noise figure 3.5 dB; power 7.8 mW; size 0.18 mum; voltage 1.1 V; CMOS integrated circuits; CMOS technology; Gain; Impedance matching; Microwave amplifiers; Microwave circuits; Power demand; Body bias; LNA; Low power; UWB; current-reuse;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6694927
