Title :
A dual-mode RF CMOS power amplifier with nonlinear capacitance compensation
Author :
Seunghoon Kang ; Bonhoon Koo ; Songcheol Hong
Author_Institution :
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
Abstract :
A fully integrated dual-mode CMOS power amplifier (PA) with nonlinear MOS capacitance compensation is presented using 0.18-μm RF CMOS process. The proposed technique is used to implement dual mode structure as well as reduces AM-PM distortion. Dual-mode output matching network using transmission line transformer (TLT) is implemented for efficient dual mode operation. With a supply voltage 3.5V, the PA has the power gain of 26.2 and 14.2dB in low power mode (LPM) and high power mode (HPM), respectively. The quiescent current is only 28mA at LPM. The maximum linear output power satisfying 3GPP WCDMA modulated signal is 28/16.3dBm with a PAE 33.8/10.2% in the HPM/LPM.
Keywords :
CMOS integrated circuits; capacitance; compensation; radiofrequency power amplifiers; transformers; transmission lines; 3GPP WCDMA modulated signal; AM-PM distortion; HPM; LPM; RF CMOS process; TLT; current 28 mA; dual-mode CMOS power amplifier; dual-mode output matching network; efficiency 10.2 percent; efficiency 33.18 percent; gain 14.2 dB; gain 26.2 dB; high power mode; low power mode; nonlinear MOS capacitance compensation; size 0.18 mum; transmission line transformer; voltage 3.5 V; CMOS integrated circuits; Capacitance; Linearity; Logic gates; MOS devices; Power amplifiers; Radio frequency; CMOS; Capacitance compensation; WCDMA; dual-mode; power amplifier (PA);
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6694929
