A K-band monolithic broadband low phase noise voltage controlled oscillators using HBT-HEMT cascode topology

Author

Shu-Yan Huang ; Chih-Chun Shen ; Yu-Cheng Liu ; Yen-Han Liao ; Hong-Yeh Chang ; Yo-Shen Lin ; Yu-Chi Wang

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

784

Lastpage

786

Abstract

In this paper, a K-band monolithic broadband low phase noise voltage controlled oscillator (VCO) using heterojunction bipolar transistor (HBT) and pseudomorphic high-electron mobility transistor (HEMT) cascode topology is presented. The bandwidth of negative resistance can be enhanced, and the low phase noise performance can be achieved using the cascode HEMT-HBT topology. The proposed K-band VCO features a tuning range of 6.61 GHz, and a phase noise of -100.3 dBc/Hz at 1-MHz offset, and a dc power consumption of 31.5 mW. The chip size of the proposed VCO is 1 × 1 mm².

Keywords

heterojunction bipolar transistors; high electron mobility transistors; microwave oscillators; voltage-controlled oscillators; HBT-HEMT cascode topology; K-band monolithic broadband low phase noise oscillators; VCO; frequency 6.61 GHz; heterojunction bipolar transistor; negative resistance; power 31.5 mW; pseudomorphic high-electron mobility transistor; voltage controlled oscillator; Frequency measurement; HEMTs; Heterojunction bipolar transistors; Phase noise; Topology; Tuning; Voltage-controlled oscillators; GaAs; HBT; HEMT; VCO; phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6694931

Filename

6694931