A K-band monolithic broadband low phase noise voltage controlled oscillators using HBT-HEMT cascode topology

In this paper, a K-band monolithic broadband low phase noise voltage controlled oscillator (VCO) using heterojunction bipolar transistor (HBT) and pseudomorphic high-electron mobility transistor (HEMT) cascode topology is presented. The bandwidth of negative resistance can be enhanced, and the low phase noise performance can be achieved using the cascode HEMT-HBT topology. The proposed K-band VCO features a tuning range of 6.61 GHz, and a phase noise of -100.3 dBc/Hz at 1-MHz offset, and a dc power consumption of 31.5 mW. The chip size of the proposed VCO is 1 × 1 mm².