A 147 GHz fully differential D-band amplifier design in 65 nm CMOS

Author

Chun-Hsing Li ; Chih-Wei Lai ; Chien-Nan Kuo

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

691

Lastpage

693

Abstract

This work presents a 147 GHz D-band fully differential amplifier design in 65 nm CMOS. By using a T-network, composed of three inductors, to replace an on-chip transformer, the proposed impedance transformation network can provide an impedance transformation ratio larger than one. So the passive gain can be acquired to increase the amplifier gain. The measured results show that the amplifier can provide power gain of 7.1 dB at 147 GHz. The power consumption is 104 mW from a 2 V supply voltage.

Keywords

CMOS analogue integrated circuits; differential amplifiers; impedance convertors; inductors; integrated circuit design; integrated circuit measurement; millimetre wave amplifiers; millimetre wave integrated circuits; CMOS technology; T-network; frequency 147 GHz; fully differential D-band amplifier design; gain 7.1 dB; impedance transformation network; inductor; on-chip transformer; passive gain acquisition; power 104 mW; size 65 nm; voltage 2 V; CMOS integrated circuits; CMOS technology; Gain; Impedance; Inductors; Resistance; Transistors; D-band; amplifier; differential; transformer;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6694937

Filename

6694937