Title :
InGaP/GaAs WLAN power amplifier with detector using on-chip coupler
Author :
Trung-Sinh Dang ; Anh-Dung Tran ; Sun-Jun Ham ; Hyun-Woo Park ; Lai-Ngoc-Duy Hien ; Sang-Woong Yoon
Author_Institution :
Dept. of Electron. & Radio Eng., Kyung Hee Univ., Yong-In, South Korea
Abstract :
This paper presents a power amplifier with an on-chip power detector for 2.4 GHz wireless local area network (WLAN) application. The power detector consists of a clamp circuit, a diode detector and a coupled line directional coupler. A series inductor for an output matching network in the power amplifier is combined with a through line of the coupler, which reduces the coupling level. Therefore, the coupler employs a metamaterial-based transformer configuration to increase coupling. The amount of coupling is increased by 2.5 dB in the 1:1 symmetric transformer structure and by 4.5 dB from 2 metamaterial units along the coupled line.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; bipolar MMIC; directional couplers; gallium arsenide; impedance matching; indium compounds; inductors; microwave metamaterials; radio transmitters; telecommunication equipment; transformers; wireless LAN; InGaP-GaAs; WLAN power amplifier; clamp circuit; coupled line directional coupler; diode detector; frequency 2.4 GHz; metamaterial based transformer; metamaterial units; on-chip coupler; output matching network; power detector; series inductor; symmetric transformer structure; wireless local area network; Couplings; Detectors; Directional couplers; Metamaterials; Power amplifiers; System-on-chip; Directional coupler; metamaterial; power amplifier; power detector; transformer;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2013 Asia-Pacific
Conference_Location :
Seoul
DOI :
10.1109/APMC.2013.6694962
