A high performance C-band FBAR filter

Author

Zhixin Zhang ; Yao Lu ; Wei Pang ; Daihua Zhang ; Hao Zhang

Author_Institution

Coll. of Precision Instrum. & Opto-Electron. Eng., Tianjin Univ., Tianjin, China

fYear

2013

fDate

5-8 Nov. 2013

Firstpage

923

Lastpage

926

Abstract

In this paper a RF band pass filter in C-band based on film bulk acoustic resonator (FBAR) technology is developed. The measured insertion loss is less than 2.0 dB at the center frequency (5.2GHz) of the filter, and the signal attenuation near the pass band of the filter is greater than 50 dB. The measurement data are in good agreement with the design employing three dimensional electromagnetic simulation techniques. A method to move the transmission zeros of the FBAR filter is proposed by adding a capacitor element between the two shunt branches of the filter. Using the technique, an FBAR filter chip can be configured to meet different rejection specifications potentially.

Keywords

acoustic resonator filters; band-pass filters; bulk acoustic wave devices; capacitors; microwave filters; C-band; FBAR filter chip; FBAR technology; RF band pass filter; capacitor element; film bulk acoustic resonator technology; frequency 5.2 GHz; shunt branches; three dimensional electromagnetic simulation techniques; transmission zeros; Band-pass filters; Capacitors; Film bulk acoustic resonators; Insertion loss; Loss measurement; Microwave filters; Resonator filters; C-band; FBAR; RF band pass filter;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2013 Asia-Pacific

Conference_Location

Seoul

Type

conf

DOI

10.1109/APMC.2013.6694976

Filename

6694976